RFM12N08 Datasheet, PDF (1/5 Pages) Intersil Corporation – 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

Semiconductor
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Data Sheet
October 1998 File Number 1386.2
12A, 80V and 100V, 0.200 Ohm, N-Channel
Power MOSFETs
[ /Title
(RFM12 ^{These are N-Channel enhancement mode silicon gate}
N08,
RFM12
N10,
RFP12
N08,
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
RFP12 _{Formerly developmental type TA09594.}
N10)
/Sub- _{Ordering Information}
ject
(12A,
PART NUMBER
PACKAGE
BRAND
80V and
100V,
0.2
RFM12N08
RFM12N10
TO-204AA
TO-204AA
RFM12N08
RFM12N10
Ohm,
RFP12N08
TO-220AB
RFP12N08
N-Chan- _RFP12N10
TO-220AB
RFP12N10
nel
Power
NOTE: When ordering, use the entire part number.
MOS-
FETs) Packaging
/Author
()
JEDEC TO-204AA
/Key-
words
DRAIN
(FLANGE)
(Harris
Semi-
conduc-
tor, N-
Chan-
nel
GATE (PIN 1)
SOURCE (PIN 2)
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Cre-
Features
• 12A, 80V and 100V
• r_DS(ON) = 0.200Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998