RFM12N08 Datasheet, PDF (2/5 Pages) Intersil Corporation – 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

RFM12N08, RFM12N10, RFP12N08, RFP12N10
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFM12N08 RFM12N10 RFP12N08 RFP12N10 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T_pkg
80
80
12
30
±20
75
0.6
-55 to 150
300
260
100
100
12
30
±20
75
0.6
-55 to 150
300
260
80
80
12
30
±20
60
0.48
-55 to 150
300
260
100
100
12
30
±20
60
0.48
-55 to 150
300
260
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFM12N08, RFP12N08
BV_DSS I_D = 250µA, V_GS = 0V
RFM12N10, EFP12N10
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
V_DS(ON)
t_d(ON)
t_r
t_d(OFF)
t_f
C_ISS
C_OSS
C_RSS
R_θJC
V_GS = V_DS, I_D = 250µA (Figure 8)
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, T_C = 125^oC
V_GS = ±20V, V_DS = 0V
I_D = 12A, V_GS = 10V (Figures 6, 7)
I_D = 12A, V_GS = 10V
V_DD = 50V, I_D = 6A, R_G = 50Ω,
V_GS = 10V, R_L = 8Ω,
(Figures 10, 11, 12)
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 9)
RFM12N08, RFM12N10
RFP12N08, RFP12N10
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Voltage (Note 2)
V_SD
I_SD = 6A
Reverse Recovery Time
t_rr
I_SD = 4A, dI_SD/dt = 100A/µs
NOTE:
2. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN
80
100
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP
MAX UNITS
-
-
V
-
-
V
-
4
V
-
1
µA
-
25
µA
-
±100
nA
-
0.200
Ω
-
2.4
V
45
70
ns
250
375
ns
85
130
ns
100
150
ns
-
850
pF
-
300
pF
-
150
pF
-
1.67 ^oC/W
-
2.083 ^oC/W
TYP
MAX UNITS
-
1.4
V
150
-
ns
2