RFM10N45 Datasheet, PDF (3/4 Pages) Intersil Corporation – 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

RFM10N45, RFM10N50
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
12
10
8
6
4
2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
T_J = MAX RATED, T_C = 25^oC
I_D MAX CONTINUOUS
10
OPERATION IN THIS AREA
1
MAY BE LIMITED BY r_DS(ON)
V_DSS (MAX) = 450V (RFM10N45)
V_DSS (MAX) = 500V (RFM10N50)
DC
0.1
1
10
10²
10³
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
24
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
20
6.0V
10V, 8V
5.0V
16
4.5V
12
V_GS = 4.0V
8
4
3.5V
3.0V
0
0
2
4
6
8
10
12
14
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
24
V_DS = 25V
PULSE DURATION = 80µs
20 DUTY CYCLE ≤ 2%
16
12
T_C = 125^oC
8
T_C = 25^oC
4
T_C = -40^oC
0
0
1
2
3
4
5
6
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
1.2
V_GS = 10V
PULSE DURATION = 80µs
1.0 _{DUTY CYCLE ≤ 2%}
0.8
T_C = 125^oC
0.6
T_C = 25^oC
0.4
T_C = -40^oC
0.2
0
7
0
4
8
12
16
20
24
28
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5-3