RFM10N45 Datasheet, PDF (2/4 Pages) Intersil Corporation – 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

RFM10N45, RFM10N50
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFM10N45 RFM10N50
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
450
500
V
Drain to Gate Voltage (R_GS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
450
500
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
10
10
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
20
20
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
150
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
150
W
1.2
W/^oC
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG -55 to 150
-55 to 150
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
260
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D = 250µA
RFM10N45
450
RFM10M50
500
Gate Threshold Voltage
V_GS(TH) V_GS = V_DS, I_D = 250µA, (Figure 8)
2.0
Zero Gate Voltage Drain Current
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC -
Gate to Source Leakage Current
I_GSS V_GS = ±20V, V_DS = 0V
-
Drain to Source On Resistance (Note 2) r_DS(ON) V_GS = 10V, I_D = 10A, (Figures 6, 7)
-
Drain to Source On Voltage (Note 2)
V_DS(ON) V_GS = 10V, I_D = 10A
Turn-On Delay Time
Rise Time
t_d(ON) V_DS = 250, I_D ≈ 5A, V_GS = 10V, R_G = 50Ω,
-
t_r
R_L = 50Ω, (Figures 10, 11, 12)
-
Turn-Off Delay Time
t_d(OFF)
-
Fall Time
t_f
-
Input Capacitance
C_ISS V_GS = 0V, V_DS = 25V, f = 1.0MHz, (Figure 9)
-
Output Capacitance
C_OSS
-
Reverse Transfer Capacitance
C_RSS
-
Thermal Impedance Junction to Case
R_θJC
-
TYP MAX UNITS
-
-
V
-
-
V
-
4.0
V
-
1
µA
-
25
µA
- ±100 nA
- 0.600 Ω
6.0
V
26 60
ns
50 100 ns
525 900 ns
105 180 ns
- 3000 pF
- 600 pF
- 200 pF
- 0.83 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2) V_SD I_SD = 5A
Reverse Recovery Time
t_rr
I_SD = 4A, dI_SD/dt = 100A/µs
NOTE:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
950
-
ns
5-2