RFM10N45 Datasheet, PDF(1/4 Page) Intersil Corporation – 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

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RFM10N45 Datasheet, PDF (1/4 Pages) Intersil Corporation – 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Semiconductor

September 1998

RFM10N45,

RFM10N50

10A, 450V and 500V, 0.600 Ohm,

N-Channel Power MOSFETs

[ /Title

(RFM10

N45,

RFM10

N50)

/Subject

(10A,

450V

and

500V,

0.600

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

204AA)

/Creator

()

/DOCIN

FO pdf-

mark

Features

â¢ 10A, 450V and 500V

â¢ rDS(ON) = 0.600â¦

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFM10N45

TO-204AA

RFM10N45

RFM10N50

TO-204AA

RFM10N50

NOTE: When ordering, include the entire part number.

Description

These are N-Channel enhancement mode silicon gate

power ï¬eld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated cir-

cuits.

Formerly developmental type TA17435.

Symbol

Packaging

DRAIN

(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

[ /Page-

Mode

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

5-1

File Number 1788.1

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