RFL1P08 Datasheet, PDF (3/4 Pages) Intersil Corporation – 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

RFL1P08, RFL1P10
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10.0
OPERATION IN THIS AREA
LIMITED BY R_DS(ON)
1.0
T_C = 25^oC
0.10
0.01
1
10
100
V_DS, DRAIN TO SOURCE (V)
1000
FIGURE 3. FORWARD BIAS OPERATING AREA
4
PULSE DURATION = 80µs
T_C = 25^oC
3
V_GS = -20V
2
V_GS = -4V
1
V_GS = -10V
V_GS = -8V
V_GS = -7V
V_GS = -6V
V_GS = -5V
0
0
-1
-2
-3
-4
-5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
2.5
4
V_DS = -10V
PULSE DURATION = 80µs
-40^oC
25^oC
2
3
1.5
125^oC
2
1
0.5
1
125^oC
V_GS = -10V
PULSE DURATION = 80µs
25^oC
-40^oC
0
0
-2
-4
-6
-8
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
0
-10
0
1
2
3
4
5
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
6-3