RFL1P08 Datasheet, PDF (2/4 Pages) Intersil Corporation – 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

RFL1P08, RFL1P10
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFL1P08
RFL1P10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T_L
-80
-80
1
5
±20
8.33
0.0667
-55 to 150
300
-100
-100
1
5
±20
8.33
0.0667
-55 to 150
300
V
V
A
A
V
W
W/^oC
o_C
o_C
AUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BV_DSS I_D = 250µA, V_GS = 0
RFL1P08
-80
RFL1P10
-100
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
V_GS(TH) V_GS = V_DS, I_D = 250µA
-2
I_DSS
V_DS = Rated BV_DSS, V_GS = 0V
-
TV_CDS==102.58^{oxCRated BVDSS, VGS = 0,}
I_GSS
V_GS = ±20V, V_DS = 0
-
V_DS(ON) I_D = 1A, V_GS = -10V
-
r_DS(ON) I_D = 1A, V_GS = -10V (Figures 6, 7)
-
t_d(ON)
I_D ≈ 1A, V_DD = -50V
-
t_r
R_G = 50Ω
V_GS = -10V
-
t_d(OFF)
R_L = 47Ω
(Figures 10, 11, 12)
-
t_f
-
C_ISS
V_GS = 0V, V_DS = -25V
-
f = 1MHz
C_OSS
(Figure 9)
-
C_RSS
-
R_θJC
-
TYP MAX UNITS
-
-
V
-
-4
V
-
-1
µA
25
µA
- ±100 nA
- -3.65 V
-
3.65
Ω
7
25
ns
15
45
ns
14
45
ns
11
25
ns
-
150 pF
-
80
pF
-
30
pF
-
15 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = -1A
Diode Reverse Recovery Time
t_rr
I_SD = -1A, dI_SD/dt = 50A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by mazimum junction temperature.
MIN TYP MAX UNITS
-
-
-1.4
V
-
135
-
ns
6-2