RFL1P08 Datasheet, PDF (1/4 Pages) Intersil Corporation – 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

Semiconductor
July 1998
Features
• 1A, -80V and -100V
• r_DS(ON) = 3.65Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1P08
TO-205AF
RFL1P08
RFL1P10
TO-205AF
RFL1P10
NOTE: When ordering, include the entire part number.
RFL1P08,
RFL1P10
1A, -80V and -100V, 3.65 Ohm,
P-Channel Power MOSFETs
Description
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA9400.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
6-1
File Number 1535.2