RFL1N10L Datasheet, PDF (3/5 Pages) Intersil Corporation – 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

RFL1N10L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
OPERATION IN THIS AREA
MAY BE LIMITED BY r_DS(ON)
1
T_C = 25^oC
0.1
0.01
1
10
100
V_DS, DRAIN TO SOURCE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
8
PULSE DURATION = 80µs
7 ^{DUTY CYCLE ≤ 2%}
T_C = 25^oC
6
5
V_GS = 10V
V_GS = 5V
4
V_GS = 4V
3
2
V_GS = 3V
1
V_GS = 2V
0
0 1 2 3 4 5 6 7 8 9 10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
6
V_DS = 10V
PULSE DURATION = 80µs
5 _{DUTY CYCLE ≤ 2%}
4
3
-40^oC ₂₅o_C
125^oC
2
125^oC
1
-40^oC
0
1
2
3
4
5
6
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
2
V_GS = 5V
PULSE DURATION = 80µs
1.5
125^oC
DUTY CYCLE ≤ 2%
1
25^oC
-40^oC
0.5
0
0
1
2
3
4
5
6
7
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
3