RFL1N10L Datasheet, PDF(1/5 Page) Intersil Corporation – 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

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RFL1N10L Datasheet, PDF (1/5 Pages) Intersil Corporation – 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

RFL1N10L

September 1998

1A, 100V, 1.200 Ohm, Logic Level, N-Channel

Power MOSFET

Features

â¢ 1A, 100V

â¢ rDS(ON) = 1.200â¦

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFL1N10L

TO-205AF

RFL1N10L

NOTE: When ordering, use the entire part number.

Description

This is an N-Channel enhancement mode silicon gate power

ï¬eld effect transistor speciï¬cally designed for use with logic

level (5V) driving sources in applications such as program-

mable controllers, automotive switching, and solenoid driv-

ers. This performance is accomplished through a special

gate oxide design which provides full rated conduction at

gate biases in the 3V to 5V range, thereby facilitating true

on-off power control directly from logic circuit supply volt-

ages.

Formerly developmental type TA09524.

Symbol

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

File Number 1510.3

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