 English |
|
|
|
|
|
|
|
| RFL1N10L Datasheet, PDF (2/5 Pages) Intersil Corporation – 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET | |||
| |||
| ◁ |
RFL1N10L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
RFL1N10L
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1Mâ¦) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL
100
100
1
5
±10
8.33
0.0667
-55 to 150
260
V
V
A
A
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
ID = 250µA, VGS = 0
100
VGS = VDS, ID = 250µA
1
VDS = Rated BVDSS
-
VTCDS==102.58oxCRated BVDSS, VDS = 80V,
-
VGS = ±10V, VDS = 0
-
ID = 1A, VGS = 5V (Figures 6, 7)
-
ID = 1A, VGS = 5V
-
ID â 1A, VDD = 50V, RG = 6.25â¦,
-
VGS = 5V, RL = 50â¦
(Figures 10, 11, 12)
-
-
-
-
-
V
-
2
V
-
1
µA
-
25
µA
- ±100 nA
- 1.200 â¦
-
1.2
V
10 25
ns
15 45
ns
25 45
ns
30 50
ns
Input Capacitance
Output Capacitance
CISS
COSS
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)
-
-
200 pF
-
-
80
pF
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
CRSS
RθJC
-
-
35
pF
-
-
15 oC/W
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Diode Reverse Recovery Time
trr
ISD = 2A, dISD/dt = 50A/µs
NOTES:
2. Pulse test: width ⤠300µs duty cycle ⤠2%.
3. Repetitive rating: pulse witdh limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
100
-
ns
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese