LMH6505 Datasheet, PDF (3/18 Pages) National Semiconductor (TI) – Wideband, Low Power, Linear-in-dB, Variable Gain Amplifier

Symbol
Parameter
V_IN NL
V_IN L
Input Voltage Range
I _{RG_MAX} R_G Current
I_BIAS
Bias Current
TC I_BIAS
R_IN
C_IN
I_VG
TC I_VG
R _VG
C _VG
V_OUT L
Bias Current Drift
Input Resistance
Input Capacitance
V_G Bias Current
V_G Bias Drift
V_G Input Resistance
V_G Input Capacitance
Output Voltage Range
V_OUT NL
R_OUT
I_OUT
Output Impedance
Output Current
V_{O OFFSET} Output Offset Voltage
+PSRR
−PSRR
I_S
+Power Supply Rejection Ratio
(Note 12)
−Power Supply Rejection Ratio
(Note 12)
Supply Current
Conditions
R_G Open
R_G = 100Ω
Pin 3
Pin 2 (Note 10)
Min
(Note 9)
±0.60
±0.50
±6.0
±5.0
Pin 2 (Note 11)
Pin 2
Pin 2
Pin 1, V_G = 2V (Note 10)
Pin 1 (Note 11)
Pin 1
Pin 1
R_L = 100Ω
R_L = Open
DC
V_OUT = ±4V from Rails
0V < V_G < 2V
Input Referred, 1V change, V_G =
2.2V
Input Referred, 1V change, V_G =
2.2V
No Load
±2.1
±1.9
±60
±40
–65
–65
9.5
7.5
Typ
(Note 8)
±3
±0.74
±7.4
−0.6
1.28
7
2.8
0.9
10
25
2.8
±2.4
±3.1
0.12
±80
±10
–72
–75
11
Max
(Note 9)
−2.5
−2.6
±55
±70
14
16
Units
V
mA
µA
nA/°C
MΩ
pF
µA
pA/°C
MΩ
pF
V
Ω
mA
mV
dB
dB
mA
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics.
Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that T_J = T_A. No guarantee of parametric performance is indicated in the Electrical Tables under conditions of internal self-heating where T_J >
T_A.
Note 3: The maximum output current (I_OUT) is determined by device power dissipation limitations or value specified, whichever is lower.
Note 4: Gain control frequency response schematic:
20171016
Note 5: The maximum power dissipation is a function of T_J(MAX), θ_JA. The maximum allowable power dissipation at any ambient temperature is P_D = (T_J(MAX) –
T_A)/ θ_JA. All numbers apply for packages soldered directly onto a PC Board.
Note 6: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)
Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
3
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