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LMH6505 Datasheet, PDF (2/18 Pages) National Semiconductor (TI) – Wideband, Low Power, Linear-in-dB, Variable Gain Amplifier | |||
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 6)
Human Body Model
Machine Model
Input Current
Output Current (Note 3)
Supply Voltages (V+ - Vâ)
Voltage at Input/ Output pins
Storage Temperature Range
2000V
200V
±10 mA
120 mA
12.6V
V+ +0.8V, Vâ â0.8V
â65°C to 150°C
Junction Temperature
Soldering Information:
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
150°C
235°C
260°C
Operating Ratings (Note 1)
Supply Voltages (V+ - Vâ)
Temperature Range (Note 5)
Thermal Resistance:
8 -Pin SOIC
(θJC)
60
8-Pin MSOP
65
7V to 12V
â40°C to +85°C
(θJA)
165
235
Electrical Characteristics (Note 2)
Unless otherwise specified, all limits are guaranteed for TJ = 25°C, VS = ±5V, AVMAX = 9.4 V/V, RF = 1 kâ¦, RG = 100â¦, VIN = ±0.1V,
RL = 100â¦, VG = +2V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 9) (Note 8) (Note 9)
Frequency Domain Response
BW
â3 dB Bandwidth
VOUT < 1 VPP
VOUT < 4 VPP, AVMAX = 100
150
MHz
38
GF
Gain Flatness
VOUT < 1 VPP
40
MHz
0.9V ⤠VG ⤠2V, ±0.2 dB
Att Range Flat Band (Relative to Max Gain) ±0.2 dB Flatness, f < 30 MHz
26
Attenuation Range (Note 15)
±0.1 dB Flatness, f < 30 MHz
9.5
dB
BW
Control
Gain control Bandwidth
VG = 1V (Note 4)
100
MHz
CT (dB) Feed-through
VG = 0V, 30 MHz
(Output/Input)
â51
dB
GR
Gain Adjustment Range
f < 10 MHz
f < 30 MHz
80
dB
71
Time Domain Response
tr, tf
OS %
Rise and Fall Time
Overshoot
0.5V Step
2.1
ns
10
%
SR
Slew Rate (Note 7)
Non Inverting
Inverting
900
1500
V/μs
Distortion & Noise Performance
HD2
HD3
2nd Harmonic Distortion
3rd Harmonic Distortion
2VPP, 20 MHz
â47
â61
dBc
THD
Total Harmonic Distortion
â45
En tot
IN
Total Equivalent Input Noise
Input Noise Current
f > 1 MHz, RSOURCE = 50â¦
f > 1 MHz
4.4
nV/
2.6
pA/
DG
Differential Gain
DP
Differential Phase
f = 4.43 MHz, RL = 100â¦
0.30
%
0.15
deg
DC & Miscellaneous Performance
GACCU
G Match
K
Gain Accuracy
(See Application Information)
Gain Matching
(See Application Information)
Gain Multiplier
(See Application Information)
VG = 2.0V
0.8V < VG < 2V
VG = 2.0V
0.8V < VG < 2V
0
±0.50
dB
+0.1/â0.53 +4.3/â3.9
0.890
0.830
â
±0.50
dB
â
+4.2/â4.0
0.940
0.990
1.04
V/V
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