IRFP340 Datasheet, PDF (3/7 Pages) Intersil Corporation – 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET

IRFP340
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
I_SD
I_SDM
Modified MOSFET
Symbol Showing the
Integral Reverse
D
P-N Junction Diode
G
MIN TYP
-
-
-
-
MAX
11
44
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
V_SD
t_rr
Q_RR
T_J = 25^oC, I_SD = 11A, V_GS = 0V (Figure 13)
T_J = 25^oC, I_SD = 10A, dI_SD/dt = 100A/µs
T_J = 25^oC, I_SD = 10A, dI_SD/dt = 100A/µs
-
-
2.0
V
170 370
790
ns
1.6 3.8
8.2
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 50V, starting T_J = 25^oC, L = 7.0mH, R_G = 50Ω, peak I_AS = 11A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C , CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
15
12
9
6
3
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
10^{-2 0.01}
SINGLE PULSE
10^-3
10^-5
10^-4
10^-3
10^-2
0.1
t₁, RECTANGULAR PULSE DURATION (s)
P_DM
t₁
t₂t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
T_J = P_DM x Z_θJC x R_θJC + T_C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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