IRFP340 Datasheet, PDF (2/7 Pages) Intersil Corporation – 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET

IRFP340
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
IRFP340
400
400
11
6.8
44
±20
150
1.2
480
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BV_DSS V_GS = 0V, I_D = 250µA (Figure 10)
V_GS(TH) V_GS = V_DS, I_D = 250µA
Zero-Gate Voltage Drain Current
I_DSS
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_J = 125^oC
On-State Drain Current (Note 2)
Gate to Source Leakage
I_D(ON)
I_GSS
V_DS > I_{D(ON) x} r_DS(ON)MAX, V_GS = 10V
V_GS = ±20V
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
r_DS(ON)
g_fs
t_d(ON)
t_r
t_d(OFF)
V_GS = 10V, I_D = 5.5A (Figures 8, 9)
V_DS ≥ 50V, I_D = 5.5A (Figure 12)
V_DD = 200V, I_D ≈ 11A, R_GS = 9.1Ω, R_L = 17.4Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
t_f
Q_g(TOT)
Q_gs
V_GS = 10V, I_D = 10A, V_DS = 0.8 x Rated BV_DSS,
I_g(REF) = 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
Gate to Drain “Miller” Charge
Input Capacitance
Q_gd
C_ISS
V_GS = 0V, V_DS = 25V, f = 1.0MHz (Figure 11)
Output Capacitance
Reverse-Transfer Capacitance
C_OSS
C_RSS
Internal Drain Inductance
Internal Source Inductance
L_D
Measured from the Drain Modified MOSFET
Lead, 6mm (0.25in) from the Symbol Showing the
Package to the Center of the Internal Devices
Die
Inductances
L_S
Measured from the Source
D
Lead, 6mm (0.25in) from
L_D
Header to the Source
Bonding Pad
G
L_S
S
Junction to Case
Junction to Ambient
R_θJC
R_θJA
Free Air Operation
MIN TYP MAX UNITS
400
-
-
V
2.0
-
4.0
V
-
-
25
µA
-
-
250
µA
11
-
-
A
-
- ±100 nA
-
0.47 0.55
Ω
6.1 9.1
-
S
-
14
21
ns
-
27
41
ns
-
50
75
ns
-
24
36
ns
-
41
63
nC
-
6.0
-
nC
-
23
-
nC
-
1250
-
pF
-
300
-
pF
-
80
-
pF
-
5.0
-
nH
-
12.5
-
nH
-
-
0.83 oC/W
-
-
30 oC/W
4-330