IRFP340 Datasheet, PDF (1/7 Pages) Intersil Corporation – 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET

Data Sheet
IRFP340
July 1999 File Number 2088.3
11A, 400V, 0.550 Ohm, N-Channel
Power MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17424.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP340
TO-247
IRFP340
NOTE: When ordering, include the entire part number.
Features
• 11A, 400V
• r_DS(ON) = 0.550Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-329
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999