HCS241MS Datasheet, PDF (3/9 Pages) Intersil Corporation – Radiation Hardened Inverting Octal Three-State Buffer/Line Driver

Specifications HCS241MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±35mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65^oC to +150^oC
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . +265^oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175^oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θ_JA
θ_JC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 72^oC/W 24^oC/W
Ceramic Flatpack Package . . . . . . . . . . . 107^oC/W 28^oC/W
Maximum Package Power Dissipation at +125^oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/^oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/^oC
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Gates
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (T_A) . . . . . . . . . . . . -55^oC to +125^oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
Three-State Output
Leakage Current
Noise Immunity
Functional Test
SYMBOL
CONDITIONS
GROUP
A SUB-
GROUPS
ICC
VCC = 5.5V,
1
VIN = VCC or GND
2, 3
IOL
VCC = VIH = 4.5V,
1
VOUT = 0.4V,
VIL = 0 (Note 2)
2, 3
IOH
VCC = VIH = 4.5V,
1
VOUT = VCC - 0.4V,
VIL = 0 (Note 2)
2, 3
VOL
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
1, 2, 3
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
1, 2, 3
VOH
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
1, 2, 3
VCC = 5.5V, VIH = 3.85V,
VIL = 1.35V, IOH = -50µA
1, 2, 3
IIN
VCC = 5.5V
1
VIN = VCC or GND
2, 3
IOZ
VCC = 5.5V, Force
1
Voltage = 0V or VCC
2, 3
FN
VCC = 4.5V, VIH = 3.15V, 7, 8A, 8B
VIL = 1.35V (Note 3)
TEMPERATURE
+25^oC
+125^oC, -55^oC
+25^oC
+125^oC, -55^oC
+25^oC
+125^oC, -55^oC
+25^oC, +125^oC,
-55^oC
+25^oC, +125^oC,
-55^oC
+25^oC, +125^oC,
-55^oC
+25^oC, +125^oC,
-55^oC
+25^oC
+125^oC, -55^oC
+25^oC
+125^oC, -55^oC
+25^oC, +125^oC,
-55^oC
LIMITS
MIN
MAX
-
40
-
750
7.2
-
6.0
-
-7.2
-
-6.0
-
-
0.1
-
0.1
VCC-
-
0.1
VCC-
-
0.1
-
±0.5
-
±5.0
-
±1.0
-
±50
-
-
NOTES:
1. All voltages referenced to device GND.
2. Force/Measure function may be interchanged.
3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
UNITS
µA
mA
mA
V
V
V
V
µA
µA
-
Spec Number 518838
304