CD4511BMS Datasheet, PDF (2/11 Pages) Intersil Corporation – CMOS BCD-to-7-Segment Latch Decoder Drivers

Specifications CD4511BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55^oC to +125^oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65^oC to +150^oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265^oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ_ja
Ceramic DIP and FRIT Package . . . . . 80^oC/W
θ_jc
20^oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70^oC/W
20^oC/W
Maximum Package Power Dissipation (PD) at +125^oC
For T_A = -55^oC to +100^oC (Package Type D, F, K) . . . . . . 500mW
For T_A = +100^oC to +125^oC (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/^oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For T_A = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175^oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Input Leakage Current
Input Leakage Current
Output Voltage
Output Voltage
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Drive Voltage
Output Drive Voltage
Output Drive Voltage
N Threshold Voltage
P Threshold Voltage
Functional
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
MIN MAX UNITS
IDD VDD = 20V, VIN = VDD or GND
1
+25^oC
-
10 µA
2
+125^oC
- 1000 µA
VDD = 18V, VIN = VDD or GND
3
-55^oC
-
10 µA
IIL VIN = VDD or GND VDD = 20
1
+25^oC
-100
-
nA
2
+125^oC
-1000 -
nA
VDD = 18V
3
-55^oC
-100
-
nA
IIH VIN = VDD or GND VDD = 20
1
+25^oC
-
100 nA
2
+125^oC
- 1000 nA
VDD = 18V
3
-55^oC
-
100 nA
VOL15 VDD = 15V, No Load
1, 2, 3
+25^oC, +125^oC, -55^oC -
50 mV
VOH15 VDD = 15V, No Load (Note 3)
1
+25^oC
14.1
-
V
2
+125^oC
14.2
V
3
-55^oC
14.0
V
IOL5 VDD = 5V, VOUT = 0.4V
1
+25^oC
1
-
mA
IOL10 VDD = 10V, VOUT = 0.5V
1
+25^oC
2.6
-
mA
IOL15 VDD = 15V, VOUT = 1.5V
1
+25^oC
6.8
-
mA
LVOH5 VDD = 5V, IOH = -20mA
1
+25^oC
3.4
-
V
LVOH10 VDD = 10V, IOH = -20mA
1
+25^oC
8.6
-
V
LVOH15 VDD = 15V, IOH = -20mA
1
+25^oC
13.7
-
V
VNTH VDD = 10V, ISS = -10µA
1
+25^oC
-2.8 -0.7 V
VPTH VSS = 0V, IDD = 10µA
1
+25^oC
0.7 2.8
V
F
VDD = 2.8V, VIN = VDD or GND
7
VDD = 20V, VIN = VDD or GND
7
+25^oC
+25^oC
VOH > VOL < V
VDD/2 VDD/2
VDD = 18V, VIN = VDD or GND
8A
+125^oC
VDD = 3V, VIN = VDD or GND
8B
-55^oC
VIL VDD = 5V, VOH > 3.6V, VOL < 0.5V 1, 2, 3 +25^oC, +125^oC, -55^oC -
1.5
V
VIH VDD = 5V, VOH > 3.6V, VOL < 0.5V 1, 2, 3 +25^oC, +125^oC, -55^oC 3.5
-
V
VIL VDD = 15V, VOH > 12.6V,
VOL < 1.5V
VIH VDD = 15V, VOH > 12.6V,
VOL < 1.5V
1, 2, 3
+25^oC, +125^oC, -55^oC -
4
V
1, 2, 3
+25^oC, +125^oC, -55^oC 11
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD
implemented.
2. Go/No Go test with limits applied to inputs.
7-1170