CD4093BMS Datasheet, PDF (2/9 Pages) Intersil Corporation – CMOS Quad 2-Input NAND Schmitt Triggers

Specifications CD4093BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55^oC to +125^oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65^oC to +150^oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265^oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ_ja
Ceramic DIP and FRIT Package . . . . . 80^oC/W
θ_jc
20^oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70^oC/W
20^oC/W
Maximum Package Power Dissipation (PD) at +125^oC
For TA = -55^oC to +100^oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100^oC to +125^oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/^oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175^oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
CONDITIONS (NOTE 1)
IDD VDD = 20V, VIN = VDD or GND
Input Leakage Current
VDD = 18V, VIN = VDD or GND
IIL VIN = VDD or GND VDD = 20
Input Leakage Current
VDD = 18V
IIH VIN = VDD or GND VDD = 20
Output Voltage
Output Voltage
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional
Positive Trigger
Threshold Voltage
Positive Trigger
Threshold Voltage
Negative Trigger
Threshold Voltage
Negative Trigger
Threshold Voltage
Hysteresis Voltage
Hysteresis Voltage
VOL15
VOH15
IOL5
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VNTH
VPTH
F
VP5V
VP15V
VP5V
VN5V
VN15V
VN5V
VH5V
VH15V
VH5V
VDD = 18V
VDD = 15V, No Load
VDD = 15V, No Load (Note 5)
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V (Note 2)
VDD = 15V (Note 3)
VDD = 5V (Note 4)
VDD = 5V (Note 2)
VDD = 15V (Note 3)
VDD = 5V (Note 4)
VDD = 5V (Note 2)
VDD = 15V (Note 3)
VDD = 5V (Note 4)
GROUP A
LIMITS
SUBGROUPS TEMPERATURE MIN MAX UNITS
1
+25^oC
-
2
µA
2
+125^oC
-
200 µA
3
-55^oC
-
2
µA
1
+25^oC
-100
-
nA
2
+125^oC
-1000 -
nA
3
-55^oC
-100
-
nA
1
+25^oC
-
100 nA
2
+125^oC
- 1000 nA
3
-55^oC
-
100 nA
1, 2, 3
+25^oC, +125^oC, -55^oC -
50 mV
1, 2, 3
+25^oC, +125^oC, -55^oC 14.95
-
V
1
+25^oC
0.53
-
mA
1
+25^oC
1.4
-
mA
1
+25^oC
3.5
-
mA
1
+25^oC
- -0.53 mA
1
+25^oC
-
-1.8 mA
1
+25^oC
-
-1.4 mA
1
+25^oC
-
-3.5 mA
1
+25^oC
-2.8 -0.7 V
1
+25^oC
0.7 2.8
V
7
+25^oC
VOH > VOL < V
7
+25^oC
VDD/2 VDD/2
8A
+125^oC
8B
-55^oC
1, 2, 3
+25^oC, +125^oC, -55^oC 2.2
3.6
V
1, 2, 3
+25^oC, +125^oC, -55^oC 6.8 10.8
V
1, 2, 3
+25^oC, +125^oC, -55^oC 2.6
4.0
V
1, 2, 3
+25^oC, +125^oC, -55^oC 0.9
2.8
V
1, 2, 3
+25^oC, +125^oC, -55^oC 4.0
7.4
V
1, 2, 3
+25^oC, +125^oC, -55^oC 1.4
3.2
V
1, 2, 3
+25^oC, +125^oC, -55^oC 0.3
1.6
V
1, 2, 3
+25^oC, +125^oC, -55^oC 1.6
5.0
V
1, 2, 3
+25^oC, +125^oC, -55^oC 0.3
1.6
V
NOTES: 1. All voltages referenced to device GND, 100% testing being im- 4. Input on terminals 1 and 2, 5 and 6, 8 and 9, or 12 and 13
plemented.
5. For accuracy, voltage is measured differentially to VDD. Limit
2. Inputs on terminals 1, 5, 8, 12
is 0.050V max.
3. Input on Terminal 1
7-1075