CD4067BMS Datasheet, PDF (2/10 Pages) Intersil Corporation – CMOS Analog Multiplexers/Demultiplexers

Specifications CD4067BMS, CD4097BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55^oC to +125^oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65^oC to +150^oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265^oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ_ja
Ceramic DIP and FRIT Package . . . . . 80^oC/W
θ_jc
20^oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70^oC/W
20^oC/W
Maximum Package Power Dissipation (PD) at +125^oC
For TA = -55^oC to +100^oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100^oC to +125^oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/^oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175^oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Input Leakage Current
Input Leakage Current
ON-State Resistance
RL = 10K Returned to
VDD - VSS/2
N Threshold Voltage
P Threshold Voltage
Functional (Note 4)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
MIN MAX UNITS
IDD VDD = 20V, VIN = VDD or GND
1
+25^oC
-
10 µA
2
+125^oC
- 1000 µA
VDD = 18V, VIN = VDD or GND
3
-55^oC
-
10 µA
IIL VIN = VDD or GND VDD = 20
1
+25^oC
-100
-
nA
2
+125^oC
-1000 -
nA
VDD = 18V
3
-55^oC
-100
-
nA
IIH VIN = VDD or GND VDD = 20
1
+25^oC
-
100 nA
2
+125^oC
- 1000 nA
VDD = 18V
3
-55^oC
-
100 nA
RON VDD = 5V
VIS = VSS to VDD
1
+25^oC
- 1050 Ω
2
+125^oC
- 1300 Ω
3
-55^oC
-
800 Ω
VDD = 10V
VIS = VSS to VDD
1
+25^oC
-
400 Ω
2
+125^oC
-
500 Ω
3
-55^oC
-
310 Ω
VDD = 15V
VIS = VSS to VDD
1
+25^oC
-
240 Ω
2
+125^oC
-
320 Ω
3
-55^oC
-
220 Ω
VNTH VDD = 10V, ISS = -10µA
1
+25^oC
-2.8 -0.7 V
VPTH VSS = 0V, IDD = 10µA
1
+25^oC
0.7 2.8
V
F
VDD = 2.8V, VIN = VDD or GND
7
VDD = 20V, VIN = VDD or GND
7
+25^oC
+25^oC
VOH > VOL < V
VDD/2 VDD/2
VDD = 18V, VIN = VDD or GND
8A
+125^oC
VDD = 3V, VIN = VDD or GND
8B
-55^oC
VIL VDD = 5V = VIS Thru 1K
VEE = VSS
VIH
RL = 1K to VSS
|ISS| < 2µA on all
OFF Channels
1, 2, 3
+25^oC, +125^oC, -55^oC -
1.5
V
1, 2, 3
+25^oC, +125^oC, -55^oC 3.5
-
V
VIL VDD = 15V = VIS Thru 1K
VEE = VSS
VIH
RL = 1K to VSS
|ISS| < 2µA on all
OFF Channels
1, 2, 3
+25^oC, +125^oC, -55^oC -
4
V
1, 2, 3
+25^oC, +125^oC, -55^oC 11
-
V
7-2