CD40106BMS Datasheet, PDF (2/9 Pages) Intersil Corporation – CMOS Hex Schmitt Triggers

Specifications CD40106BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55^oC to +125^oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65^oC to +150^oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265^oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ_ja
Ceramic DIP and FRIT Package . . . . . 80^oC/W
θ_jc
20^oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70^oC/W
20^oC/W
Maximum Package Power Dissipation (PD) at +125^oC
For T_A = -55^oC to +100^oC (Package Type D, F, K) . . . . . . 500mW
For T_A = +100^oC to +125^oC (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/^oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For T_A = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175^oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
CONDITIONS (NOTE 1)
IDD VDD = 20V, VIN = VDD or GND
Input Leakage Current
VDD = 18V, VIN = VDD or GND
IIL VIN = VDD or GND VDD = 20
Input Leakage Current
VDD = 18V
IIH VIN = VDD or GND VDD = 20
VDD = 18V
Output Voltage
VOL15 VDD = 15V, No Load
Output Voltage
VOH15 VDD = 15V, No Load (Note 2)
Output Current (Sink)
IOL5 VDD = 5V, VOUT = 0.4V
Output Current (Sink)
IOL10 VDD = 10V, VOUT = 0.5V
Output Current (Sink)
IOL15 VDD = 15V, VOUT = 1.5V
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V
N Threshold Voltage
VNTH VDD = 10V, ISS = -10µA
P Threshold Voltage
VPTH VSS = 0V, IDD = 10µA
Functional
F
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Positive Trigger
Threshold Voltage
(See Figure 17)
VP5
VP10
VP15
VDD = 5V
VDD = 10V
VDD = 15V
Negative Trigger
Threshold Voltage
(See Figure 17)
VN5
VN10
VN15
VDD = 5V
VDD = 10V
VDD = 15V
Hysteresis Voltage
(See Figure 17)
VH5 VDD = 5V
VH10 VDD = 10V
VH15 VDD = 15V
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
MIN MAX UNITS
1
+25^oC
-
2
µA
2
+125^oC
-
200 µA
3
-55^oC
-
2
µA
1
+25^oC
-100
-
nA
2
+125^oC
-1000 -
nA
3
-55^oC
-100
-
nA
1
+25^oC
-
100 nA
2
+125^oC
- 1000 nA
3
-55^oC
-
100 nA
1, 2, 3
+25^oC, +125^oC, -55^oC -
50 mV
1, 2, 3
+25^oC, +125^oC, -55^oC 14.95
-
V
1
+25^oC
0.53
-
mA
1
+25^oC
1.4
-
mA
1
+25^oC
3.5
-
mA
1
+25^oC
- -0.53 mA
1
+25^oC
-
-1.8 mA
1
+25^oC
-
-1.4 mA
1
+25^oC
-
-3.5 mA
1
+25^oC
-2.8 -0.7 V
1
+25^oC
0.7 2.8
V
7
+25^oC
VOH > VOL < V
7
+25^oC
VDD/2 VDD/2
8A
+125^oC
8B
-55^oC
1, 2, 3
+25^oC, +125^oC, -55^oC 2.2
3.6
V
1, 2, 3
+25^oC, +125^oC, -55^oC 4.6
7.1
V
1, 2, 3
+25^oC, +125^oC, -55^oC 6.8 10.8
V
1, 2, 3
+25^oC, +125^oC, -55^oC 0.9
2.8
V
1, 2, 3
+25^oC, +125^oC, -55^oC 2.5
5.2
V
1, 2, 3
+25^oC, +125^oC, -55^oC 4
7.4
V
1, 2, 3
+25^oC, +125^oC, -55^oC 0.3
1.6
V
1, 2, 3
+25^oC, +125^oC, -55^oC 1.2
3.4
V
1, 2, 3
+25^oC, +125^oC, -55^oC 1.6
5.0
V
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit
implemented.
is 0.050V max.
2. Go/No Go test with limits applied to inputs.
7-1328