ISL32601EFBZ Datasheet, PDF (18/23 Pages) Intersil Corporation – 1.8V to 3.3V, Micro-Power, ±15kV ESD, +125°C, Slew Rate Limited, RS-485/RS-422 Transceivers

ISL32600E, ISL32601E, ISL32602E, ISL32603E
Typical Performance Curves V_CC = 3V (ISL32600E, ISL32601E) or 1.8V (ISL32602E, ISL32603E), T_A = +25°C; Unless Otherwise
Specified (Continued)
V_CC = 1.8V
DI
2
RO
0
R_DIFF = 10kΩ, C_D = 50pF
2
0
V_CC = 1.8V
DI
2
RO
0
R_DIFF = 10kΩ, C_D = 50pF
2
0
1.5
1.0
0.5
0
A/Y - B/Z
-0.5
-1.0
-1.5
TIME (1µs/DIV)
FIGURE 34. ISL32602E, ISL32603E DRIVER AND RECEIVER
WAVEFORMS, LOW TO HIGH
V_CC = 3.3V
DI
3
RO
0
R_DIFF = 54Ω, C_D = 50pF
3
0
1.5
1.0
0.5
0
A/Y - B/Z
-0.5
-1.0
-1.5
TIME (1µs/DIV)
FIGURE 35. ISL32602E, ISL32603E DRIVER AND RECEIVER
WAVEFORMS, HIGH TO LOW
V_CC = 3.3V
DI
R_DIFF = 54Ω, C_D = 50pF
3
0
3
RO
0
3
2
1
0
-1 ^{A/Y - B/Z}
-2
-3
TIME (200ns/DIV)
FIGURE 36. ISL32602E, ISL32603E DRIVER AND RECEIVER
WAVEFORMS, LOW TO HIGH
3
2
1
0
-1
A/Y - B/Z
-2
-3
TIME (200ns/DIV)
FIGURE 37. ISL32602E, ISL32603E DRIVER AND RECEIVER
WAVEFORMS, HIGH TO LOW
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
PROCESS:
Si Gate BiCMOS
18
FN7967.0
June 22, 2012