ISL75051SRH Datasheet, PDF (13/15 Pages) Intersil Corporation – 3A, Rad Hard, Positive, Ultra Low Dropout Regulator

ISL75051SRH
Weight Characteristics
Weight of Packaged Device
K18.D: 1.07 Grams typical with leads clipped
Die Characteristics
Die Dimensions
4555µm x 4555µm (179.3 mils x 179.3 mils)
Thickness: 304.8µm ± 25.4µm (12.0 mils ± 1 mil)
Interface Materials
GLASSIVATION
Type: Silicon Oxide and Silicon Nitride
Thickness: 0.3µm ± 0.03µm to 1.2µm ± 0.12µm
TOP METALLIZATION
Type: AlCu (99.5%/0.5%)
Thickness: 2.7µm ±0.4µm
BACKSIDE METALLIZATION
None
SUBSTRATE
Type: Silicon
BACKSIDE FINISH
Silicon
PROCESS
0.6µM BiCMOS Junction Isolated
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased
ADDITIONAL INFORMATION
Worst Case Current Density
< 2 x 10⁵ A/cm²
Transistor Count
2932
Layout Characteristics
Step and Repeat
4555µm x 4555µm
Metallization Mask Layout
PAD X Y COORDINATES
PAD NAME X µm Y µm
1 GND 0
0
2 GND -393 0
3 VO UT -711 -710
4 VO UT -711 -1858
5 VO UT -711 -2964
6 ADJ -1680 -3070
7 BYP -1621 -3879
8 EN 2164 -3879
9 OCP 2222 -3131
10 VIN 1078 -2965
11 VIN 1078 -1853
12 VIN 1078 -711
13 PG 420 -25
13
FN7610.1
November 4, 2011