ISL71090SEH50 Datasheet, PDF (1/13 Pages) Intersil Corporation – RH voltage regulators precision outputs

DATASHEET
Radiation Hardened Ultra Low Noise, Precision Voltage
Reference
ISL71090SEH50
The ISL71090SEH50 is an ultra low noise, high DC accuracy
precision voltage reference with a wide input voltage range
from 7V to 30V. The ISL71090SEH50 uses the Intersil
Advanced Bipolar technology to achieve 1.1µV_P-P noise at
0.1Hz with an accuracy over-temperature of 0.15%.
The ISL71090SEH50 offers a 5.0V output voltage with
10ppm/°C temperature coefficient and also provides
excellent line and load regulation. The device is offered in an
8 Ld Flatpack package.
The ISL71090SEH50 is ideal for high-end instrumentation,
data acquisition and applications requiring high DC precision
where low noise performance is critical.
Applications
• RH voltage regulators precision outputs
• Precision voltage sources for data acquisition system for
space applications
• Strain and pressure gauge for space applications
Related Literature
• AN1847, “ISL71090SEH12EV1Z, ISL71090SEH25EV1Z,
ISL71090SEH50EV1Z, ISL71090SEH75EV1Z User Guide”
• AN1848, “Single Event Effects (SEE) Testing of the
ISL71090SEH Precision Voltage Reference”
• AN1849, “Total Dose Testing of the ISL71090SEH Precision
Voltage Reference”
Features
• Reference output voltage . . . . . . . . . . . . . . . . . . 5.0V ±0.05%
• Accuracy over temperature . . . . . . . . . . . . . . . . . . . . .±0.15%
• Output voltage noise . . . . . .1.1µV_P-P typical (0.1Hz to 10Hz)
• Supply current . . . . . . . . . . . . . . . . . . . . . . . . . . 930µA (typical)
• Tempco (box method) . . . . . . . . . . . . . . 10ppm/°C maximum
• Output current capability . . . . . . . . . . . . . . . . . . . . . . . . 20mA
• Line regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8ppm/V
• Load regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . .10ppm/mA
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- High dose rate (50-300rad(Si)/s) . . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)*
- SET/SEL/SEB . . . . . . . . . . . . . . . . . . . . . . .86MeV•cm²/mg
*Product capability established by initial characterization. The
“EH” version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate
• Electrically screened to SMD 5962-13211
VIN
0.1µF
ISL71090SEH50
1
DNC
2
VIN
3 _COMP
1nF ₄
GND
8
DNC
7
DNC
VOUT ⁶
5
TRIM
VREF
1µF
C
REFIN DACOUT
VDD
VDD
D12
VEE
VEE
D0
1.1k
NOTE: SELECT C TO MINIMIZE
SETTLING TIME.
BIPOFF
GND
HS-565BRH
FIGURE 1. ISL71090SEH50 TYPICAL APPLICATION DIAGRAM
5.012
5.010
5.005V +0.1%
5.008 ^UNIT4
5.006
UNIT5
5.004
5.002
5.000
UNIT3
UNIT2
UNIT1
4.998
-55
-35
-15
5
25 45 65
5.005V -0.1%
85 105 125
TEMPERATURE (°C)
FIGURE 2. V_OUT vs TEMPERATURE
March 15, 2016
1
FN8588.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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