ISL6615A Datasheet, PDF (1/12 Pages) Intersil Corporation – High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features

High-Frequency 6A Sink Synchronous MOSFET
Drivers with Protection Features
ISL6615A
The ISL6615A is a high-speed MOSFET driver optimized
to drive upper and lower power N-Channel MOSFETs in a
synchronous rectified buck converter topology. This
driver, combined with an Intersil Digital or Analog
multiphase PWM controller, forms a complete high
frequency and high efficiency voltage regulator.
The ISL6615A drives both upper and lower gates over a
range of 4.5V to 13.2V. This drive-voltage provides the
flexibility necessary to optimize applications involving
trade-offs between gate charge and conduction losses.
The ISL6615A features 6A typical sink current for the
low-side gate driver, enhancing the lower MOSFET gate
hold-down capability during PHASE node rising edge,
preventing power loss caused by the self turn-on of the
lower MOSFET due to the high dV/dt of the switching
node.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the
dead-time. The ISL6615A includes an overvoltage
protection feature operational before VCC exceeds its
turn-on threshold, at which the PHASE node is connected
to the gate of the low side MOSFET (LGATE). The output
voltage of the converter is then limited by the threshold
of the low side MOSFET, which provides some protection
to the load if the upper MOSFET(s) is shorted.
The ISL6615A also features an input that recognizes a
high-impedance state, working together with Intersil
multiphase PWM controllers to prevent negative
transients on the controlled output voltage when
operation is suspended. This feature eliminates the need
for the Schottky diode that may be utilized in a power
system to protect the load from negative output voltage
damage.
Features
• Dual MOSFET Drives for Synchronous Rectified
Bridge
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- LGATE Detection
- Auto-zero of r_DS(ON) Conduction Offset Effect
• Adjustable Gate Voltage for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 1MHz)
- 6A LGATE Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Support 5V PWM Input Logic
• Tri-State PWM Input for Safe Output Stage Shutdown
• Tri-State PWM Input Hysteresis for Applications with
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper PAD for Better Heat
Spreading
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-free (RoHS compliant)
Applications*(see page 10)
• Optimized for POL DC/DC Converters for IBA
Systems
• Core Regulators for Intel® and AMD®
Microprocessors
• High Current Low-Profile DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
• Synchronous Rectification for Isolated Power
Supplies
Related Literature*(see page 10)
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Technical Brief TB389 “PCB Land Pattern Design and
Surface Mount Guidelines for QFN Packages”
April 22, 2010
FN6608.1
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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