VE28F008 Datasheet, PDF(4/26 Page) Intel Corporation – 8 MBIT (1 MBIT x 8) FLASH MEMORY

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

VE28F008 Datasheet, PDF (4/26 Pages) Intel Corporation – 8 MBIT (1 MBIT x 8) FLASH MEMORY

◁

VE28F008

Symbol

RY BY

VPP

VCC

GND

Type

OUTPUT

Table 1 Pin Description (Continued)

Name and Function

READY BUSY Indicates the status of the internal Write State Machine When

low it indicates that the WSM is performing a block erase or byte write operation

RY BY high indicates that the WSM is ready for new commands block erase is

suspended or the device is in deep powerdown mode RY BY is always active and

does NOT float to tri-state off when the chip is deselected or data outputs are

disabled

BLOCK ERASE BYTE WRITE POWER SUPPLY for erasing blocks of the array

or writing bytes of each block

NOTE

With VPP k VPPLMAX memory contents cannot be altered

DEVICE POWER SUPPLY (5V g5%)

GROUND

Figure 2 TSOP Pinout

271305 â 2

▷