VE28F008 Datasheet, PDF (1/26 Pages) Intel Corporation – 8 MBIT (1 MBIT x 8) FLASH MEMORY

VE28F008
8 MBIT (1 MBIT x 8) FLASH MEMORY
Y High-Density Symmetrically Blocked
Architecture
Sixteen 64 Kbyte Blocks
Y Avionics Temperature Range
b_{40 C to} a_{125 C}
Y Extended Cycling Capability
10K Block Erase Cycles
160K Block Erase
Cycles per Chip
Y Automated Byte Write and Block Erase
Command User Interface
Status Register
Y System Performance Enhancements
RY BY Status Output
Erase Suspend Capability
Y Very High-Performance Read
95 ns Maximum Access Time
Y SRAM-Compatible Write Interface
Y Hardware Data Protection Feature
Erase Write Lockout during Power
Transitions
Y Industry Standard Packaging
40-Lead TSOP
Y ETOXTM III Nonvolatile Flash
Technology
12V Byte Write Block Erase
Y Independent Software Vendor Support
Microsoft Flash File System (FFS)
Intel’s VE28F008 8-Mbit Flash File^TM Memory revolutionizes the design of high performance and durable
mass storage memory systems for the Industrial Avionics and Military markets With its innovative features
like low power blocked architecture high read write performance and expanded temperature range any
design or mission is free from the dependence on battery backed up memory or highly sensitive and slow
rotating media drives
Using the VE28F008 in a PCMCIA 2 1 Flash Memory card ATA drive or any size or shape module will allow
data application or operating systems to be updated or collected anywhere and at anytime This data on
demand feature ensures protection from obsolesce through field or in system software updates
The VE28F008’s highly integrated Command User Interface and Write State Machine decreases the size and
complexity of system software while providing high read write and erase performance The sixteen separately
erasable 64 Kbyte blocks along with a multiple write data protection system provides assurance that highly
important data will be available when needed
The VE28F008 is offered in a 40-lead TSOP (Thin Small Outline Package) which is capable of performing in
temperatures from ^b40 C to ^a125 C It employs advanced CMOS circuitry for systems requiring low power
consumption and noise immunity The VE28F008’s 95 ns access time provides superior performance when
compared to magnetic mass storage
Manufactured on Intel’s 0 8 micron ETOX^TM III process the VE28F008 provides the highest levels of quality
reliability and cost effectiveness
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Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
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changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT INTEL CORPORATION 1995
May 1994
Order Number 271305-001