RD28F3208C3T70 Datasheet, PDF (16/70 Pages) Intel Corporation – 3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye

3 Volt Intel^® Advanced+ Boot Block Flash Memory Stacked-CSP Family
3.6
3.6.1
command is written to the flash memory, the WSM will continue with the programming process
and status register bits SR.2 and SR.7 will automatically be cleared. The device automatically
outputs status register data when read (see Appendix A, Program Suspend/Resume Flowcharts)
after the Program Resume command is written. F-V_PP must remain at the same F-V_PP level used
for program while in program suspend mode. F-RP# must also remain at V_IH.
Block Erase (20h)
To erase a block, write the Erase Set-up and Erase Confirm commands to the CUI, along with an
address identifying the block to be erased. This address is latched internally when the Erase
Confirm command is issued. Block erasure results in all bits within the block being set to “1.” Only
one block can be erased at a time. The WSM will execute a sequence of internally timed events to
program all bits within the block to “0,” erase all bits within the block to “1,” then verify that all
bits within the block are sufficiently erased. While the erase executes, status bit 7 is a “0.”
When the status register indicates that erasure is complete, check the erase status bit to verify that
the erase operation was successful. If the Erase operation was unsuccessful, SR.5 of the status
register will be set to a “1,” indicating an erase failure. If F-V_PP was not within acceptable limits
after the Erase Confirm command was issued, the WSM will not execute the erase sequence;
instead, SR.5 of the status register is set to indicate an erase error, and SR.3 is set to a “1” to
identify that F-V_PP supply voltage was not within acceptable limits.
After an erase operation, clear the status register (50h) before attempting the next operation. Any
CUI instruction can follow after erasure is completed; however, to prevent inadvertent status
register reads, it is advisable to place the flash in read array mode after the erase is complete.
Suspending and Resuming Erase (B0h/D0h)
An erase operation can take several seconds to complete, therefore, the Erase Suspend command is
provided to allow erase-sequence interruption in order to read data from, or program data to,
another block in memory. Once an erase sequence has started, writing the Erase Suspend command
to the CUI causes the device to suspend the erase sequence at a predetermined point in the erase
algorithm. Block erase is suspended when Status Register bits SR[7,6] are set. Suspend latency is
specified in Section 5.7, “Flash Erase and Program Timings” on page 31.
When an erase operation has been suspended, a Word Program or Read operation can be performed
within any block, except the block that is in an erase suspend state. An erase operation cannot be
nested within another erase suspend operation.
A suspended erase operation cannot resume until the nested program operation has completed.
Read Array, Read Status Register, Clear Status Register, Read Identifier, CFI Query, Erase
Resume, are all valid commands during Erase Suspend. Additionally, Program, Program Suspend,
Program Resume, Lock Block, Unlock Block and Lock-Down Block are valid commands during
Erase Suspend.
To resume an erase suspend operation, issue the Resume command. The Resume command can be
written to any device address. When a program operation is nested within an Erase Suspend
operation and the Program Suspend command is issued, the device will suspend the program
operation. When the resume command is issued, the device will resume the program operation
first. Once the nested program operation is completed, an additional Resume command is required
to complete the block operation.
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Datasheet