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SKP15N60 Datasheet, PDF (9/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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SKP15N60, SKB15N60
SKW15N60
500ns
2000nC
400ns
300ns
200ns
IF = 30A
IF = 7.5A
IF = 15A
100ns
1500nC
1000nC
500nC
IF = 30A
IF = 15A
IF = 7.5A
0ns
100A/µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
0nC
100A/µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
20A
1 0 0 0 A /µs
16A
IF = 30A
12A
IF = 15A
IF = 7.5A
8A
8 0 0 A /µs
6 0 0 A /µs
4 0 0 A /µs
4A
0A
100A/µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
2 0 0 A /µs
0 A /µs
100A/µs 300A/µs 500A/µs 700A/µs 900A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
9
Jul-02
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