SKP15N60 Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP15N60, SKB15N60
SKW15N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB¹⁾
Symbol
R_thJC
R_thJCD
R_thJA
R_thJA
Conditions
TO-220AB
TO-247AC
TO-263AB
Max. Value
Unit
0.9
K/W
1.7
62
40
40
Electrical Characteristic, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V_(BR)CES
V_CE(sat)
V_F
V_GE(th)
I_CES
I_GES
g_fs
V_GE=0V, I_C=500µA
V_GE = 15V, I_C=15A
T_j=25°C
T_j=150°C
V_GE=0V, I_F=15A
T_j=25°C
T_j=150°C
I_C=400µA,V_CE=V_GE
V_CE=600V,V_GE=0V
T_j=25°C
T_j=150°C
V_CE=0V,V_GE=20V
V_CE=20V, I_C=15A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C_iss
C_oss
C_rss
Q_Gate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current²⁾
L_E
I_C(SC)
V_CE=25V,
V_GE=0V,
f=1MHz
V_CC=480V, I_C=15A
V_GE=15V
TO-220AB
TO-247AC
V_GE=15V,t_SC≤10µs
V_CC ≤ 600V,
T_j ≤ 150°C
min.
600
1.7
-
1.2
-
3
-
-
-
3
-
-
-
-
-
-
-
Value
Typ.
-
2
2.3
1.4
1.25
4
-
-
-
10.9
800
84
52
76
7
13
150
Unit
max.
-V
2.4
2.8
1.8
1.65
5
µA
40
2000
100 nA
-S
960 pF
101
62
99 nC
- nH
-
-A
1) _{Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm}2 _{(one layer, 70µm thick) copper area for}
collector connection. PCB is vertical without blown air.
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
2
Jul-02