SKP15N60 Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP15N60, SKB15N60
SKW15N60
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=25°C,
V_CC=400V,I_C=15A,
V_GE=0/15V,
R_G=21Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =250pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25°C,
V_R=200V, I_F=15A,
di_F/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
32
23
234
46
0.30
0.27
0.57
279
28
254
390
5.0
180
Unit
max.
38 ns
28
281
55
0.36 mJ
0.35
0.71
- ns
-
-
- nC
-A
- A/µs
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=150°C
V_CC=400V,I_C=15A,
V_GE=0/15V,
R_G=21Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =250pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=150°C
V_R=200V, I_F=15A,
di_F/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
31
23
261
54
0.45
0.41
0.86
360
40
320
1020
7.5
200
Unit
max.
38 ns
28
313
65
0.54 mJ
0.53
1.07
- ns
-
-
- nC
-A
- A/µs
1) _{Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.}
3
Jul-02