 English |
|
|
|
|
|
|
|
| SKP04N60 Datasheet, PDF (9/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
| |||
| ◁ |
500ns
400ns
300ns
200ns
100ns
IF = 8A
IF = 2A
IF = 4A
0ns
40A/µs 120A/µs 200A/µs 280A/µs 360A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
8A
6A
IF = 8A
4A
IF = 4A
IF = 2A
2A
0A
40A/µs 120A/µs 200A/µs 280A/µs 360A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
SKP04N60
SKB04N60
560nC
480nC
400nC
IF = 8A
320nC
240nC
160nC
IF = 4A
IF = 2A
80nC
0nC
40A/µs 120A/µs 200A/µs 280A/µs 360A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
400A/µs
320A/µs
240A/µs
160A/µs
80A/µs
0A/µs
40A/µs
120A/µs 200A/µs 280A/µs 360A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
9
Jul-02
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese