SKP04N60 Datasheet, PDF (10/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP04N60
SKB04N60
8A
2.0V
I_F = 8A
6A
4A
150°C
100°C
25°C
2A
-55°C
0A
0.0V
0.5V
1.0V
1.5V
2.0V
V_F, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
1.5V
I_F = 4A
1.0V
-40°C 0°C 40°C 80°C 120°C
T_j, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as
a function of junction temperature
D=0.5
10⁰K/W ^0.2
0.1
0.05
0.02
10^-1K/W
0.01
single pulse
R,(K/W)
0.128
0.387
0.346
1.360
2.280
τ, (s)=
0.085
7.30*10^-3
4.69*10^-3
7.34*10^-4
5.96*10^-5
R1
R2
C1=τ1/R1 C2=τ2/R2
10^-2K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t_p / T)
10
Jul-02