SKP04N60 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP04N60
SKB04N60
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=25°C,
V_CC=400V,I_C=4A,
V_GE=0/15V,
R _G =67Ω ,
L_σ¹⁾ =180nH,
C_σ¹⁾ =180pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25°C,
V_R=200V, I_F=4A,
di_F/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
22
15
237
70
0.070
0.061
0.131
26 ns
18
284
84
0.081 mJ
0.079
0.160
180
- ns
15
-
165
-
130
- nC
2.5
-A
180
- A/µs
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=150°C
V_CC=400V,I_C=4A,
V_GE=0/15V,
R_G=67Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =180pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=150°C
V_R=200V, I_F=4A,
di_F/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
22
16
264
104
0.115
0.111
0.226
26 ns
19
317
125
0.132 mJ
0.144
0.277
230
- ns
23
-
227
-
300
- nC
4
-A
200
- A/µs
1) _{Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.}
3
Jul-02