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| SKP02N60 Datasheet, PDF (9/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
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500ns
400ns
300ns
200ns
100ns
IF = 4A
IF = 1A
IF = 2A
0ns
20A/µs 60A/µs 100A/µs 140A/µs 180A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
5A
4A
3A
IF = 4A
IF = 2A
IF = 1A
2A
1A
0A
20A/µs 60A/µs 100A/µs 140A/µs 180A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
SKP02N60
SKB02N60
280nC
240nC
200nC
160nC
120nC
IF = 4A
IF = 2A
IF = 1A
80nC
40nC
0nC
20A/µs 60A/µs 100A/µs 140A/µs 180A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
250A/µs
200A/µs
150A/µs
100A/µs
50A/µs
0A/µs
20A/µs
60A/µs
100A/µs 140A/µs 180A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
9
Jul-02
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