SKP02N60 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP02N60
SKB02N60
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=25°C,
V_CC=400V,I_C=2A,
V_GE=0/15V,
R_G=118Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =180pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25°C,
V_R=200V, I_F=2.9A,
di_F/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
20
13
259
52
0.036
0.028
0.064
24 ns
16
311
62
0.041 mJ
0.036
0.078
130
- ns
12
-
118
-
65
- nC
1.9
-A
180
- A/µs
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=150°C
V_CC=400V,
I_C=2A,
V_GE=0/15V,
R_G=118Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =180pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=150°C
V_R=200V, I_F=2.9A,
di_F/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
20
14
287
67
0.054
0.043
0.097
24 ns
17
344
80
0.062 mJ
0.056
0.118
150
- ns
19
-
131
-
150
- nC
3.8
-A
200
- A/µs
1) _{Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.}
3
Jul-02