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| SKP02N60 Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
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SKP02N60
SKB02N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction â case
Diode thermal resistance,
junction â case
Thermal resistance,
junction â ambient
SMD version, device on PCB1)
Symbol
RthJC
RthJCD
RthJA
RthJA
Conditions
TO-220AB
TO-263AB
Max. Value
Unit
4.2
K/W
7
62
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=2A
Tj=25°C
Tj=150°C
VGE=0V, IF=2.9A
Tj=25°C
Tj=150°C
IC=150µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=2A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=2A
VGE=15V
TO-220AB
VGE=15V,tSCâ¤10µs
VCC ⤠600V,
Tj ⤠150°C
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
1.9
2.2
1.4
1.25
4
-
-
-
1.6
142
18
10
14
7
20
Unit
max.
-V
2.4
2.7
1.8
1.65
5
µA
20
250
100 nA
-S
170 pF
22
12
18 nC
- nH
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Jul-02
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