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| SKP02N120 Datasheet, PDF (9/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
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250ns
200ns
150ns
100ns
IF=2A
50ns
IF=1A
0ns
100A/µs 200A/µs 300A/µs 400A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
10A
8A
6A
IF=1A
IF=2A
4A
2A
0A
100A/µs 200A/µs 300A/µs 400A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
SKP02N120
SKB02N120
0.4µC
0.3µC
0.2µC
IF=1A
IF=2A
0.1µC
0.0µC
100A/µs 200A/µs 300A/µs 400A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
400A/µs
300A/µs
200A/µs
IF=1A
IF=2A
100A/µs
0A/µs
100A/µs
200A/µs
300A/µs
400A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
Power Semiconductors
9
Jul-02
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