SKP02N120 Datasheet, PDF (10/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

7A
6A
5A
T_J=150°C
4A
3A
T_J=25°C
2A
1A
0A
0V
1V
2V
3V
4V
V_F, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
SKP02N120
SKB02N120
3.0V
2.5V
2.0V
1.5V
1.0V
I_F=4A
I_F=2A
I_F=1A
0.5V
0.0V
0°C
40°C
80°C 120°C
T_j, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as
a function of junction temperature
D=0.5
10⁰K/W ^0.2
0.1
0.05
10^-1K/W
R,(K/W)
0.10109
0.99478
1.07923
1.94890
R1
τ, (s)
0.38953
0.04664
0.00473
0.00066
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10^-2K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t_p / T)
Power Semiconductors
10
Jul-02