SKP02N120 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP02N120
SKB02N120
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_F
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=25°C,
V_CC=800V,I_C=2A,
V_GE=15V/0V,
R_G=91Ω,
L_σ¹⁾=180nH,
C_σ¹⁾=40pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25°C,
V_R=800V, I_F=2A,
di_F/dt=250A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
23
16
260
61
0.16
0.06
0.22
50
0.10
4.2
400
Unit
max.
30 ns
21
340
80
0.21 mJ
0.08
0.29
ns
µC
A
A/µs
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_F
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=150°C
V_CC=800V,
I_C=2A,
V_GE=15V/0V,
R_G=91Ω,
L_σ¹⁾=180nH,
C_σ¹⁾=40pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=150°C
V_R=800V, I_F=2A,
di_F/dt=300A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
26
14
290
85
0.27
0.11
0.38
90
0.30
6.7
110
1) _{Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.}
Unit
max.
31 ns
17
350
102
0.33 mJ
0.15
0.48
ns
µC
A
A/µs
Power Semiconductors
3
Jul-02