PTFA181001GL Datasheet, PDF (9/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz

Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Package Outline Specifications
Package PG-63248-2
4.83±0.51
[.190±.020]
45° X 2.72
[45° X .107]
CL
5
45° X 1.78
[45° X .070]
CL
2X R1.63
[R.064]
3X R0.51^{+–10..1245}
[R.020^{+–..004150} ]
20.27
[.798]
CL
3.63^{+–00..2153}
[.143^{+–..001005} ]
0.064 (.0025)
PG-68248-2-G_po_5-9-08
–A–
34.04
[1.340]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
4. Gold plating thickness: < 0.254 micron [< 10 microinch]
5. Tabs may protrude 0.13 [.005] max from body.
6. All tolerances: TBD.
7. Primary dimensions are mm. Alternate dimensions are inches.
Preliminary Data Sheet
9 of 11
Rev. 01, 2008-06-15