|
PTFA181001GL Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz | |||
|
◁ |
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 100 W PEP, Æ = 1850 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps
â
16.5
ηD
â
41
IMD
â
â30
Max
â
â
â
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, ID = 750 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min Typ
65
â
â
â
â
â
â
0.085
2.0
2.5
â
â
Max
â
1.0
10.0
â
3.0
1.0
Unit
V
µA
µA
â¦
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 100 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
â0.5 to +12
200
TBD
TBD
â40 to +150
TBD
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA181001GL* V1
PTFA181001HL* V1
Package Type
PG-63248-2
PG-64248-2
Package Description
Shipping
Thermally-enhanced, plastic
Tray
open-cavity, slotted flange, single-ended
Thermally-enhanced, plastic
Tray
open-cavity, earless flange, single-ended
Marking
PTFA181001GL
PTFA181001HL
*See Infineon distributor for future availability.
Preliminary Data Sheet
2 of 11
Rev. 01, 2008-06-15
|
▷ |