PTFA181001GL Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz

Confidential, Limited Internal Distribution
Reference Circuit
Preliminary PTFA181001GL
PTFA181001HL
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C2
0.001µF
C3
0.001µF
R3
2K V
R4
2K V
R5
10 V
R6
5.1K V
R8
2K V
L1
VDD
C4
10µF
C5 R7
0.1µF 5.1K V
C6
1µF
C7
0.01µF
C8
10pF
l5
C11 C12 C13
1µF 10pF 1µF
C14
10µF
C15
10µF
35V
50V
50V
R9
10 V
l8
R F_IN
C9
10pF
l1
l2
l3
l4
DUT
l6
l7
l10 l11
C21
1.5pF
l12 l13
C24
10pF
l14
l15
RF_OUT
C10
0.6pF
l9
C22
1.5pF
C23
0.6pF
L2
C16 C17 C18
1µF
10pF 1µF
C19
10µF
50V
a181001ef_sch_06-04-18
C20
10µF
50V
Reference circuit schematic for ƒ = 1880 MHz
Circuit Assembly Information
DUT
PCB
PTFA181001GL or PTFA181001HL
0.76 mm [.030"] thick, ε_r = 4.5
LDMOS Transistor
Rogers TMM4
2 oz. copper
Microstrip Electrical Characteristics at 1880 MHz¹
l1
0.314 λ, 50.0 Ω
l2
0.172 λ, 38.0 Ω
l3
0.016 λ, 11.4 Ω
l4
0.024 λ, 60.0 Ω
l5
0.218 λ, 60.0 Ω
l6
0.019 λ, 6.9 Ω
l7
0.044 λ, 6.9 Ω
l8, l9
0.233 λ, 53.0 Ω
l10
0.039 λ, 4.9 Ω
l11 (taper)
0.037 λ, 4.9 Ω / 10.3 Ω
l12 (taper)
0.033 λ, 10.3 Ω / 41.0 Ω
l13
0.069 λ, 41.0 Ω
l14
0.038 λ, 41.0 Ω
l15
0.331 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
27.43 x 1.37
14.73 x 2.16
1.27 x 10.16
2.24 x 0.99
19.33 x 0.99
1.52 x 17.78
3.43 x 17.78
20.45 x 1.24
3.10 x 25.65
2.92 x 25.65 / 11.43
2.79 x 11.43 / 1.91
6.35 x 1.91
3.25 x 1.91
28.98 x 1.37
Dimensions: L x W (in.)
1.080 x 0.054
0.580 x 0.085
0.050 x 0.400
0.088 x 0.039
0.761 x 0.039
0.060 x 0.700
0.135 x 0.700
0.805 x 0.049
0.122 x 1.010
0.115 x 1.010 / 0.450
0.110 x 0.450 / 0.075
0.250 x 0.075
0.128 x 0.075
1.141 x 0.054
Preliminary Data Sheet
7 of 11
Rev. 01, 2008-06-15