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PTFA091201GL Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz
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Package Outline Specifications (cont.)
Package PG-64248-2
PTFA091201GL
PTFA091201HL
9.78 ± 0.08
[.385 ± .003]
20.57 ± 0.08
[.810 ± .003]
pg-64248-2(h)_po_8-28-08
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
5. Gold plating thickness: < 0.254 micron [< 10 microinch]
6. Tabs may protrude 0.13 [.005] max from body.
7. All tolerances ± 0.25 [.01] / ± 0.127 [.005] unless specified otherwise.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9 of 10
Rev. 02, 2008-08-27