PTFA091201GL Datasheet, PDF (8/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz

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Package Outline Specifications
Package PG-63248-2
4.83±0.51
[.190±.020]
45° X 2.72
[45° X .107]
CL
45° X 1.78
[45° X .070]
CL
2X R1.63
[R.064]
3X R0.51^{+–10..1245}
[R.020^{+–..004150} ]
PTFA091201GL
PTFA091201HL
6.
9.78 ± 0.08
[.385 ± .003]
20.27
[.798]
CL
3.63^{+–00..2153}
[.143^{+–..001005} ]
0.064 (.0025)
PG-63248-2(G)_po_8-28-08
–A–
34.04 ± 0.08
[1.340 ± .003]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
5. Gold plating thickness: < 0.254 micron [< 10 microinch]
6. Tabs may protrude 0.13 [.005] max from body.
7. All tolerances ± 0.25 [.01] / ± 0.127 [.005] unless specified otherwise.
Data Sheet
8 of 10
Rev. 02, 2008-08-27