PTFA091201GL Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz

Confidential, Limited Internal Distribution
Reference Circuit
PTFA091201GL
PTFA091201HL
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BC P56
C2
0.001µF ^C0.0301µF
R3
R4
2KV
2KV
R5
5.1K V
R6
10 V
C4
10µF
35V
C5 R7
C6
0.1µF ^{5.1K V} 33pF
C7
0.1µF
C8
0.01µF
C9
33pF
l5
RF_ IN
C10
33pF
l1
l2
C11
1.2pF
R8
10 V
l3
C12
7.5pF
l4
C13
0.7pF
DUT
L1
C14
33pF
C15
1µF
C16
10µF
50V
C17
0.1µF
l6
l8
l7
C24
1.0pF
l9
C25
1.0pF
C27
33pF
l10 l11
l12
C26
2.4pF
L2
C18
10µF
50V
l13
C28
0.5pF
RF_ O U T
VDD
C19
C20
C21
33pF
1µF
10µF
50V
C22
0.1µF
C23
10µF
50V
Reference circuit schematic for ƒ = 960 MHz
Circuit Assembly Information
DUT
PTFA091201GL or PTFA091201HL
PCB
0.76 mm [.030"] thick, ε_r = 4.5
Microstrip Electrical Characteristics at 960 MHz¹
l1
0.072 λ, 50.0 Ω
l2
0.115 λ, 50.0 Ω
l3
0.029 λ, 50.0 Ω
l4
0.062 λ, 7.5 Ω
l5
0.149 λ, 70.0 Ω
l6, l7
0.122 λ, 55.0 Ω
l8
0.027 λ, 7.9 Ω
l9
0.103 λ, 7.9 Ω
l10
0.072 λ, 7.9 Ω
l11
0.155 λ, 38.0 Ω
l12
0.013 λ, 50.0 Ω
l13
0.015 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Rogers TMM4
LDMOS Transistor
2 oz. copper
Dimensions: L x W ( mm)
12.27 x 1.40
19.53 x 1.40
5.08 x 1.40
9.53 x 16.15
26.31 x 0.71
20.96 x 1.17
4.06 x 15.24
15.75 x 15.24
11.02 x 15.24
25.78 x 2.13
2.24 x 1.40
2.59 x 1.40
Dimensions: L x W (in.)
0.483 x 0.055
0.769 x 0.055
0.200 x 0.055
0.375 x 0.636
1.036 x 0.028
0.825 x 0.046
0.160 x 0.600
0.620 x 0.600
0.434 x 0.600
1.015 x 0.084
0.088 x 0.055
0.102 x 0.055
Data Sheet
6 of 10
Rev. 02, 2008-08-27