IPD65R400CE Datasheet, PDF (9/15 Pages) Infineon Technologies AG – 650V CoolMOSª CE Power Transistor

650VCoolMOSªCEPowerTransistor
IPD65R400CE,IPS65R400CE
Diagram9:Typ.transfercharacteristics
35
30
25
20
15
10
5
0
0
2
4
6
VGS[V]
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
10
9
25 °C
8
7
120 V
480 V
6
5
150 °C
4
3
2
1
8
10
0
0
5 10 15 20 25 30 35 40
Qgate[nC]
VGS=f(Qgate);ID=4.9Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
10²
25 °C
125 °C
10¹
Diagram12:Avalancheenergy
250
200
150
100
10⁰
50
10^-1
0.0
0.5
1.0
1.5
VSD[V]
IF=f(VSD);parameter:Tj
0
2.0
25
50
75
100
125
150
Tj[°C]
EAS=f(Tj);ID=1.8A;VDD=50V
Final Data Sheet
9
Rev.2.0,2016-02-23