IPD65R400CE Datasheet, PDF (1/15 Pages) Infineon Technologies AG – 650V CoolMOSª CE Power Transistor

IPD65R400CE,IPS65R400CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSuperjunction
MOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingand
conductionlossesmakeswitchingapplicationsevenmoreefficient,more
compact,lighterandcooler.
DPAK
tab
2
1
3
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•JEDECqualfied,Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
400
mΩ
ID.
15.1
A
Qg.typ
39
nC
ID,pulse
30
A
Eoss@400V
2.8
µJ
Type/OrderingCode
IPD65R400CE
IPS65R400CE
Package
PG-TO 252
PG-TO 251
Marking
65S400CE
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.0,2016-02-23