IPD65R400CE Datasheet, PDF (5/15 Pages) Infineon Technologies AG – 650V CoolMOSª CE Power Transistor

650VCoolMOSªCEPowerTransistor
IPD65R400CE,IPS65R400CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related¹⁾
Effective output capacitance,
time related²⁾
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
650
2.5
-
-
-
-
-
-
Values
Typ. Max.
-
-
3.0 3.5
-
1
10 -
-
100
0.36 0.40
0.94 -
7.5 -
Unit Note/TestCondition
V
VGS=0V,ID=1mA
V
VDS=VGS,ID=0.32mA
µA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=10V,ID=3.2435A,Tj=25°C
VGS=10V,ID=3.2435A,Tj=150°C
Ω f=1MHz,opendrain
Min.
-
-
Values
Typ. Max.
710 -
41 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
-
32 -
pF VGS=0V,VDS=0...480V
-
140 -
pF ID=constant,VGS=0V,VDS=0...480V
-
10 -
ns
VDD=400V,VGS=13V,ID=4.86525A,
RG=4.9Ω;seetable9
-
7
-
ns
VDD=400V,VGS=13V,ID=4.86525A,
RG=4.9Ω;seetable9
-
57 -
ns
VDD=400V,VGS=13V,ID=4.86525A,
RG=4.9Ω;seetable9
-
8
-
ns
VDD=400V,VGS=13V,ID=4.86525A,
RG=4.9Ω;seetable9
Min.
-
-
-
-
Values
Typ. Max.
4
-
20 -
39 -
5.5 -
Unit Note/TestCondition
nC
VDD=480V,ID=4.86525A,VGS=0to
10V
nC
VDD=480V,ID=4.86525A,VGS=0to
10V
nC
VDD=480V,ID=4.86525A,VGS=0to
10V
V
VDD=480V,ID=4.86525A,VGS=0to
10V
1)_{Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V}
2)_{Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V}
Final Data Sheet
5
Rev.2.0,2016-02-23