HYR163240G Datasheet, PDF (9/14 Pages) Infineon Technologies AG – Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)

HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Absolute Maximum Ratings
Symbol Parameter
V_I,ABS
V_DD,ABS
T_STORE
Voltage applied to any RSL or CMOS signal pad with
respect to GND
Voltage on V_DD with respect to GND
Storage temperature
Limit Values
Unit
min.
max.
– 0.3
V_DD + 0.3 V
– 0.5
– 50
V_DD + 1.0 V
100
°C
DC Recommended Electrical Conditions
Symbol Parameter and Conditions
V_DD
V_CMOS
Supply voltage
CMOS I/O power supply at pad for
2.5 V controllers:
CMOS I/O power supply at pad for
1.8 V controllers:
V_REF
V_IL
V_IH
V_IL,CMOS
V_IH,CMOS
V_OL,CMOS
V_OH,CMOS
I_REF
Reference voltage
RSL input low voltage
RSL input high voltage
CMOS input low voltage
CMOS input high voltage
CMOS output low voltage @
I_OL,CMOS = 1 mA
CMOS output high voltage @
I_OH,CMOS = – 0.25 mA
V_REF current @ V_REF,MAX
I_SCK,CMD
I_SIN,SOUT
CMOS input leakage current @
(0 ≤ V_CMOS ≤ V_DD)
CMOS input leakage current @
(0 ≤ V_CMOS ≤ V_DD)
Limit Values
Unit
min.
max.
2.50 – 0.13
2.50 + 0.13
V
2.5 – 0.13
2.5 + 0.25
V
1.8 – 0.1
1.8 + 0.2
V
1.4 – 0.2
1.4 + 0.2
V
V_REF – 0.5
V_REF – 0.2
V
V_REF + 0.2
V_REF + 0.5
V
– 0.3
0.5 V_CMOS – 0.25 V
0.5 V_CMOS + 0.25 V_CMOS + 0.7
V
–
0.3
V
V_CMOS – 0.3
–
V
– 10 × no.
10 × no.
µA
RDRAMs¹⁾
RDRAMs¹⁾
– 10 × no.
10 × no.
µA
RDRAMs¹⁾
RDRAMs¹⁾
– 10.0
10.0
µA
1) The table below shows the number of 288 Mbit RDRAM devices contained in a RIMM module of
listed memory storage capacity.
RIMM Module Capacity
Number of 288 Mbit RDRAM devices
64/72 MB
2
128/
144 MB
4
256/
288 MB
8
512/
576 MB
16
INFINEON Technologies
9
7.01